Cite
HARVARD Citation
Hua, M. et al. (2018). Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric. Physica status solidi. 215 (10), p. n/a. [Online].
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Hua, M. et al. (2018). Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric. Physica status solidi. 215 (10), p. n/a. [Online].