The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through hollow cathode plasma. (October 2015)

• Record Type: Journal Article
• Authors: Ge, Teng; Wang, Zhengduo; Chen, Jiuxiang; Zhang, Shouye; Shi, Jilong; Chen, Qiang
• Is Part Of: Materials science in semiconductor processing. Volume 38(2015:Oct.)
• Page Start: 319
• Page End: 323
• Publication Date: 2015-10
• Subjects: 68.35.bg; -- 52.50.Dg; -- 52.77.Dq; Microcrystalline silicon -- Low temperature deposition -- Hollow cathode effect -- Crystalline volume fraction; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.11.027
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: we exhibited the micro-hollow cathode (MHC) discharge to perform plasma enhanced chemical vapor deposition of hydrogenated microcrystalline silicon (μc-Si:H) in this paper. The role of substrate temperature on the μc-Si:H crystalline was focused. After testifying three substrates, glass, indium tin oxide (ITO) coating glass, and ITO coating polyimide (PI), we obtained over 80% crystalline volume fraction of μc-Si:H formed on the glass substrate. It was found that even the substrate temperature was as low as 120 °C the microcrystal Si can still be grown on ITO coating PI. We believe the high ionization rate in MHC due to hollow cathode effect promotes the microcrystal Si formation.