Cite
HARVARD Citation
Ge, T. et al. (n.d.). The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through hollow cathode plasma. Materials science in semiconductor processing. pp. 319-323. [Online].
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Ge, T. et al. (n.d.). The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through hollow cathode plasma. Materials science in semiconductor processing. pp. 319-323. [Online].