Vertical power Schottky barrier diodes using a high-k insulator. (7th September 2015) - Huang, Mingmin
Abstract: Several types of vertical power Schottky barrier diodes (SBDs) using a high- k (H k ) insulator, which have a low specific on-resistance ( R on ) close to that of the superjunction (SJ) SBD with the same breakdown voltage (BV), are studied. By introducing an N + -poly-region in the H k insulator at the anode side, the reverse leakage current of the H k -SBD can be largely reduced without increasing the forward voltage drop. Simulation results based on Sentaurus show that, by using the N + -poly-region, the reverse leakage current of the 400 V H k -SBD can be lowered by more than 40 times with R on (=3.13 mΩ · cm 2 ) equaling about eight times smaller than that of the conventional SBD having almost the same BV. It is also found that the reverse recovery behavior of the H k -SBDs is much softer than that of the SJ-SBD.