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MLA Citation
Jörg Schulze et al.. “Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors.” Solid-state electronics, vol. 110, 2015, pp. 59–64. http://access.bl.uk/ark:/81055/vdc_100042260869.0x000052
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Jörg Schulze et al.. “Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors.” Solid-state electronics, vol. 110, 2015, pp. 59–64. http://access.bl.uk/ark:/81055/vdc_100042260869.0x000052