Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. (August 2015)

• Record Type: Journal Article
• Authors: Schulze, Jörg; Blech, Andreas; Datta, Arnab; Fischer, Inga A.; Hähnel, Daniel; Naasz, Sandra; Rolseth, Erlend; Tropper, Eva-Maria
• Is Part Of: Solid-state electronics. Volume 110(2015)
• Page Start: 59
• Page End: 64
• Publication Date: 2015-08
• Subjects: Tunneling field effect transistor -- GeSn devices -- Ge devices; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.01.013
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: We present experimental results on the fabrication and characterization of vertical Ge and GeSn heterojunction Tunneling Field Effect Transistors (TFETs). A gate-all-around process with mesa diameters down to 70 nm is used to reduce leakage currents and improve electrostatic control of the gate over the transistor channel. An ION = 88.4 μA/μm at VDS = VG = −2 V is obtained for a TFET with a 10 nm Ge0.92 Sn0.08 layer at the source/channel junction. We discuss further possibilities for device improvements.