Cite
HARVARD Citation
Schulze, J. et al. (2015). Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. Solid-state electronics. pp. 59-64. [Online].
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Schulze, J. et al. (2015). Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. Solid-state electronics. pp. 59-64. [Online].