Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress. (September 2017)

• Record Type: Journal Article
• Authors: Ritter, Matthias; Pfost, Martin
• Is Part Of: Microelectronics and reliability. Volume 76/77(2017)
• Page Start: 512
• Page End: 516
• Publication Date: 2017-09
• Subjects: Aging sensor -- On-chip metallization -- LDMOS -- Cyclic -- Thermomechanical stress -- Sense line -- Resistance change -- Resistance peak -- Metallization failure; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.06.009
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.