Cite
HARVARD Citation
Tallarico, A. et al. (2017). Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectronics and reliability. pp. 475-479. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Tallarico, A. et al. (2017). Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectronics and reliability. pp. 475-479. [Online].