Cite
HARVARD Citation
Boige, F. et al. (2017). Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics and reliability. pp. 500-506. [Online].
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Boige, F. et al. (2017). Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics and reliability. pp. 500-506. [Online].