Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies. (November 2017)

• Record Type: Journal Article
• Authors: d'Alessandro, Vincenzo; Catalano, Antonio Pio; Magnani, Alessandro; Codecasa, Lorenzo; Rinaldi, Niccolò; Moser, Brian; Zampardi, Peter J.
• Is Part Of: Microelectronics and reliability. Volume 78(2017)
• Page Start: 233
• Page End: 242
• Publication Date: 2017-11
• Subjects: Design of Experiments (DOE) -- Finite-element method (FEM) -- Flip-chip (FC) -- Gallium arsenide (GaAs) -- Heterojunction bipolar transistor (HBT) -- Laminate technology -- Thermal resistance -- Wire-bonding (WB); Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.09.011
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Both wire-bonding and flip-chip technologies are examined. The combination between an accurate, yet fast, simulation capability and the Design of Experiments technique is employed to quantify the impact of all the key technology parameters and explore a wide range of operating conditions. Highlights: An accurate analysis of the thermal behavior of packaged InGaP/GaAs HBTs is performed. The analysis is conducted by combining an advanced simulation capability and the DOE. The impact of all the key technological parameters of die and laminate is examined. The wire-bonding and flip-chip packaging solutions are thermally compared. DOE-based expansions are derived for a fast assessment of thermal resistances.