Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability. (November 2017)

• Record Type: Journal Article
• Authors: Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R.S.
• Is Part Of: Superlattices and microstructures. Volume 111(2017)
• Page Start: 10
• Page End: 22
• Publication Date: 2017-11
• Subjects: ATLAS-TCAD -- Poisson's -- Cylindrical gate all around -- Laplace -- Localize charges -- Schottky-Barrier -- Dual Metal Gate (DMG) -- Vacuum gate dielectric; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.04.034
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: An explicit surface potential and subthreshold current model for novel Dual Metal Gate (DMG) Asymmetric Vacuum (AV) as gate dielectric Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with the incorporation of localized charges (Nf ) is developed to provide excellent immunity against threshold voltage (Vth ) degradation due to hot carriers. Hot carrier induced Localized Charges (LC) either positive or negative leads to degrade the threshold of the device. The major advantage of the proposed DMG-AV-SB-CGAA MOSFET is that it mitigates the ambipolar behavior thus offering very good on current to off current ratio; and also reduces the electron temperature which leads to less hot carrier generation thus lesser degradation in Vth and improved Hot Carrier reliability. The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation. Highlights: Analytical Model for Noval Asymmetric Vacuum Gate Dielectric SB CGAA MOSFET. Drastic Reduction in Ambipolarity of SB CGAA has achieved. The improved Ioff is reported thus increases Ion /Ioff ratio. The impact of Localized charges (Nf ) has been minimized in proposed device. Comparative study has been presented among gate material engineering and without gate material engineering devices.