Cite
HARVARD Citation
Kumar, M. et al. (2017). Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability. Superlattices and microstructures. pp. 10-22. [Online].
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Kumar, M. et al. (2017). Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability. Superlattices and microstructures. pp. 10-22. [Online].