Cite
HARVARD Citation
Liu, L. et al. (2017). Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer. Physica status solidi. 11 (9), p. n/a. [Online].
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Liu, L. et al. (2017). Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer. Physica status solidi. 11 (9), p. n/a. [Online].