Characterization of MIS structures and thin film transistors using RF-sputtered HfO2/HIZO layers. (August 2017)

• Record Type: Journal Article
• Authors: Hernandez, I.; Pons-Flores, C.A.; Garduño, I.; Tinoco, J.; Mejia, I.; Estrada, M.
• Is Part Of: Microelectronics and reliability. Volume 75(2017)
• Page Start: 9
• Page End: 13
• Publication Date: 2017-08
• Subjects: Room temperature RF sputtering -- HfO2 and HIZO thin films -- Bias stress stability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.06.003
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: MIS structures using HfO2 and HIZO layers, both deposited by room temperature RF magnetron sputtering are fabricated for TFTs application and characterized using capacitance-voltage. The relative dielectric constant obtained at 1 kHz was 11, the charge carrier concentration of the HIZO was in the range of (2–3) × 10 18 cm − 3 and the interface trap density at flat band was smaller than 2 × 10 12 cm − 2 . The critical electric field of the HfO2 layer was higher than 5 × 10 5 V/cm, with a current density in the operating voltage range below 4 × 10 − 8 A/cm 2 . The hysteresis and bias stress behavior of RF-sputtered HfO2 /HIZO MIS structures is presented. Fabricated HfO2 /HIZO TFTs worked in the operation voltage range below 8 V. Highlights: Characterization of RF sputtered HfO2 /HIZO MIS structure Analysis of HfO2 /HIZO interface obtained by RF sputtering Reduction of operating voltage in HfO2 /HIZO TFTs