Cite
MLA Citation
Atsushi Tanaka et al.. “Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017).” Physica status solidi, vol. 214, no. 8, 2017, p. n/a. http://access.bl.uk/ark:/81055/vdc_100048211072.0x000023