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APA Citation
Tanaka, A., Barry, O., Nagamatsu, K., Matsushita, J., Deki, M., Ando, Y., Kushimoto, M., Nitta, S., Honda, Y., & Amano, H. (2017). facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017). Physica status solidi, 214(8), n/a. http://access.bl.uk/ark:/81055/vdc_100048211072.0x000023