Cite
MLA Citation
Patrick Fiorenza et al.. “Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices.” Physica status solidi, vol. 214, no. 4, 2017, p. n/a. http://access.bl.uk/ark:/81055/vdc_100044869523.0x000016