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APA Citation
Fiorenza, P., Greco, G., Vivona, M., Giannazzo, F., Di Franco, S., Frazzetto, A., Guarnera, A., Saggio, M., Iucolano, F., Patti, A., & Roccaforte, F. (2017). electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices. Physica status solidi, 214(4), n/a. http://access.bl.uk/ark:/81055/vdc_100044869523.0x000016