Cite
HARVARD Citation
Fiorenza, P. et al. (2017). Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices. Physica status solidi. 214 (4), p. n/a. [Online].
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Fiorenza, P. et al. (2017). Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices. Physica status solidi. 214 (4), p. n/a. [Online].