Schottky performance variation on r-plane and c-plane of GaN micro truncated-pyramid grown by selective area MOCVD. (1st June 2017)

• Record Type: Journal Article
• Authors: Chen, Jie; Han, Xiaobiao; Huang, Puman; Chen, Weijie; Liang, Jiezhi; Zhong, Changming; Pan, Zhengzhou; Wu, Zhisheng; Liu, Yang; Zhang, Baijun
• Is Part Of: Materials science in semiconductor processing. Volume 63(2017)
• Page Start: 248
• Page End: 252
• Publication Date: 2017-06-01
• Subjects: GaN -- Schottky contacts -- Semipolar plane -- SAG -- Pyramid; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.02.030
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The electric properties of Pt Schottky contacts on semipolar r -plane and polar c -plane of GaN micro truncated-pyramid are compared. The Schottky diodes of the inclined r -plane sample illustrate a relatively inferior rectified performance than that of the top c -plane GaN in term of the lower Schottky barrier heights, larger ideality factor and reverse leakage current. By depositing Pt metal on the dislocation-free area of the top of GaN micro pyramid, the Schottky performance of r -plane GaN can be slightly improved, but still shows much larger reverse leakage current than that of c -plane GaN. It is found that polarization-related surface states and incorporation of donor impurities, rather than dislocation, should mainly contribute to this remarkable electric discrepancy of the planes.