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HARVARD Citation
Chen, J. et al. (2017). Schottky performance variation on r-plane and c-plane of GaN micro truncated-pyramid grown by selective area MOCVD. Materials science in semiconductor processing. pp. 248-252. [Online].
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Chen, J. et al. (2017). Schottky performance variation on r-plane and c-plane of GaN micro truncated-pyramid grown by selective area MOCVD. Materials science in semiconductor processing. pp. 248-252. [Online].