Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]. (1st June 2017) - Veloso, A.; Keersgieter, A. De; Matagne, P.; Horiguchi, N.; Collaert, N.