Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. (June 2017)

• Record Type: Journal Article
• Authors: Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
• Is Part Of: Superlattices and microstructures. Volume 106(2017)
• Page Start: 139
• Page End: 146
• Publication Date: 2017-06
• Subjects: TFET -- Band to band tunneling (BTBT) -- Heterojunction -- GaAsBi -- GaAsN; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.03.048
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap E G, eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced E G, eff . Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85 Bi0.15 /GaAs0.92 N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher I ON compared to InAs and In0.53 Ga0.47 As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET. Highlights: Strain-symmetrized GaAsBi/GaAsN nTFETs with effective lattice match to GaAs and type-II tunnel junction are designed. Performance of GaAsBi/GaAsN hetero-TFET is boosted with the increasing of Bi and N compositions. GaAs0.85 Bi0.15 /GaAs0.92 N0.08 hetero-TFET demonstrates an improved I ON and SS compared to the InAs homo-TFET.