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HARVARD Citation
Wang, Y. et al. (2017). Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. Superlattices and microstructures. pp. 139-146. [Online].
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Wang, Y. et al. (2017). Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. Superlattices and microstructures. pp. 139-146. [Online].