Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC. (April 2017)

• Record Type: Journal Article
• Authors: Tran, Hiep; Kracica, Masturina; McCulloch, Dougal; Mayes, Edwin; Holland, Anthony; Partridge, James
• Is Part Of: Microelectronics and reliability. Volume 71(2017)
• Page Start: 82
• Page End: 85
• Publication Date: 2017-04
• Subjects: TCAD -- Graphite -- Carbon -- Schottky -- Diode -- 6H-SiC; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.02.017
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Junctions between energetically deposited graphitic carbon and n-type 6H-SiC have been fabricated. Their current-voltage characteristics have been measured and compared with simulations using Sentaurus TCAD finite element software. Agreement between the experimental and simulated current-voltage characteristics was achieved using parameters derived from electrical measurements and electron microscopy. Using the best-fit models, the effects of interfacial layers and contact work function variations were elucidated to provide guidance for improved device performance. Highlights: Rectifying contacts between 6H-SiC and oriented graphitic C have been fabricated. Electrical measurements, electron microscopy and modelling were performed. Thin a-C interfacial layers were found to enhance device performance. TCAD modelling provided insight and guidance for improvement.