Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC. (April 2017) - Tran, Hiep
Abstract: Junctions between energetically deposited graphitic carbon and n-type 6H-SiC have been fabricated. Their current-voltage characteristics have been measured and compared with simulations using Sentaurus TCAD finite element software. Agreement between the experimental and simulated current-voltage characteristics was achieved using parameters derived from electrical measurements and electron microscopy. Using the best-fit models, the effects of interfacial layers and contact work function variations were elucidated to provide guidance for improved device performance. Highlights: Rectifying contacts between 6H-SiC and oriented graphitic C have been fabricated. Electrical measurements, electron microscopy and modelling were performed. Thin a-C interfacial layers were found to enhance device performance. TCAD modelling provided insight and guidance for improvement.