Cite
MLA Citation
V. Deshpande et al.. “DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration.” Solid-state electronics, vol. 128, 2017, pp. 87–91. http://access.bl.uk/ark:/81055/vdc_100040778786.0x00001b