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HARVARD Citation
Deshpande, V. et al. (2017). DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration. Solid-state electronics. pp. 87-91. [Online].
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Deshpande, V. et al. (2017). DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration. Solid-state electronics. pp. 87-91. [Online].