Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. (December 2016)

• Record Type: Journal Article
• Authors: Zhang, Wenqi; Wang, Tzuo-Li; Huang, Yan-Hua; Cheng, Tsu-Ting; Chen, Shih-Yao; Li, Yi-Ying; Hsu, Chun-Hsiang; Lai, Chih-Jui; Yeh, Wen-Kuan; Yang, Yi-Lin
• Is Part Of: Microelectronics and reliability. Volume 67(2016)
• Page Start: 89
• Page End: 93
• Publication Date: 2016-12
• Subjects: Hot-carrier injection -- FinFET -- Multi-fin structure -- Coupling effect; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.10.015
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, hot-carrier injection (HCI) stress has been used to investigate the reliability of n-channel FinFET devices with different fin numbers. Threshold voltage (VTH ) shift, subthreshold swing and transconductance variation were extracted to evaluate the degradation of the device under stress. FinFET devices with fewer fins show more serious performance degradation due to hot-carrier injection stress. It is suggested that the existing of coupling effect between neighboring fins reduces the inversion charge density and equivalent electric field in multi-fin devices, which causes better reliability than single-fin devices. Highlights: Hot-carrier injection (HCI) stress was used to study the reliability of n-channel FinFET devices with different fin numbers. FinFET devices with fewer fins show more serious performance degradation due to hot-carrier injection stress. The existing of coupling effect between neighboring fins reduces the inversion charge density and equivalent electric field in multi-fin devices. Multi-fin devices show better reliability than single-fin devices.