Cite
HARVARD Citation
Zhang, W. et al. (2016). Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. Microelectronics and reliability. pp. 89-93. [Online].
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Zhang, W. et al. (2016). Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. Microelectronics and reliability. pp. 89-93. [Online].