Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy. (November 2016)

• Record Type: Journal Article
• Authors: Kot, D.; Kissinger, G.; Schubert, M.A.; Klingsporn, M.; Huber, A.; Sattler, A.
• Is Part Of: Superlattices and microstructures. Volume 99(2016)
• Page Start: 231
• Page End: 235
• Publication Date: 2016-11
• Subjects: Stoichiometry -- Oxygen precipitates -- Silicon -- EDX -- EELS -- FTIR -- Spectroscopy; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.02.004
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this work, we used EDX, EELS and FTIR spectroscopy to investigate the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The EDX analysis of a plate-like precipitate demonstrated that the composition of the precipitate is SiO1.93 . This result was confirmed by EELS where the characteristic plasmon peak of SiO2 was observed. Additionally, the absorption band of plate-like precipitates at 1223 cm −1 was found in the FTIR spectrum measured at liquid helium temperature. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO2 . Highlights: The thickness of the investigated sample is an important parameter having influence on the intensity of the X-rays. From equation (1), we determined the x values in the EDX probed field which was 1.93. The experimental spectrum can be very well simulated by 5 absorption bands using the dielectric function of amorphous SiO2 .