Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope. (November 2016)
- Record Type:
- Journal Article
- Title:
- Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope. (November 2016)
- Main Title:
- Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope
- Authors:
- Zhai, Yuwei
Liang, Faguo
Guo, Chunsheng
Liu, Yan - Abstract:
- Abstract: The junction-to-case thermal resistance ( R θJC ) of a GaN/AlGaN HEMT is measured by Transient Dual Interface Method (TDIM). Different from other works about TDIM, an improved transient infrared microscope is used to measure the cooling curves, other than the traditional electrical method. Z th curves are used to determine the R θJC following the procedure of JESD51-14. The results demonstrate that the R θJC at 40 W power dissipation are about 0.791 K/W. In order to validate the method, measurements following MIL Std 833 have been done, and the results are consistent with the existing papers. Highlights: The R θJC of a GaN/AlGaN HEMT is measured by TDIM using an improved infrared microscope The R θJC of a GaN/AlGaN HEMT is measured by TDIM using an improved infrared microscope. In the infrared microscope, a NI5122 is used to sample the signal, and the calculation software is developed in LabVIEW. The thermal mapper function has been used to measure accurate channel temperature and correct the R θJC results. Measurements of R θJC following MIL Std 833 had been done. The junction temperature was measured by thermal mapper. Because that the case temperature measured by thermocouple may be lower than the real one, the R θJC would be higher.
- Is Part Of:
- Microelectronics and reliability. Volume 66(2016)
- Journal:
- Microelectronics and reliability
- Issue:
- Volume 66(2016)
- Issue Display:
- Volume 66, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 66
- Issue:
- 2016
- Issue Sort Value:
- 2016-0066-2016-0000
- Page Start:
- 52
- Page End:
- 57
- Publication Date:
- 2016-11
- Subjects:
- Transient dual interface measurement -- Junction-to-case thermal resistance -- GaN/AlGaN HEMT -- Infrared microscopy
Electronic apparatus and appliances -- Reliability -- Periodicals
Miniature electronic equipment -- Periodicals
Appareils électroniques -- Fiabilité -- Périodiques
Équipement électronique miniaturisé -- Périodiques
Electronic apparatus and appliances -- Reliability
Miniature electronic equipment
Periodicals
621.3815 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00262714 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.microrel.2016.10.006 ↗
- Languages:
- English
- ISSNs:
- 0026-2714
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.979000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 2651.xml