Cite
HARVARD Citation
Zhai, Y. et al. (2016). Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope. Microelectronics and reliability. pp. 52-57. [Online].
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Zhai, Y. et al. (2016). Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope. Microelectronics and reliability. pp. 52-57. [Online].