Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT. (October 2016)

• Record Type: Journal Article
• Authors: Swain, R.; Jena, K.; Lenka, T.R.
• Is Part Of: Materials science in semiconductor processing. Volume 53(2016:Oct.)
• Page Start: 66
• Page End: 71
• Publication Date: 2016-10
• Subjects: 2DEG -- AlN/GaN -- MOSHEMT -- Normally-off -- Oxide interfacial charge -- TCAD; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.06.008
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this paper a detail insight into the role of oxide/barrier interfacial charges ( N ox ) for shifting the threshold voltage ( V T ) of AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) is gained. A model is developed for V T considering all possible charges arise at different interfaces. To validate the model the proposed device is simulated by considering different insulators and N ox into account. It is very fascinating to observe that VT is highly sensitive towards change in N ox at higher oxide dimensions, whereas at lower dimensions N ox has very negligible effect. Normally-off operation can be achieved by increasing or decreasing N ox in MOSHEMT with Al2 O3 or HfO2 as gate dielectric respectively.