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HARVARD Citation
Swain, R. et al. (n.d.). Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT. Materials science in semiconductor processing. pp. 66-71. [Online].
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Swain, R. et al. (n.d.). Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT. Materials science in semiconductor processing. pp. 66-71. [Online].