Cite
MLA Citation
Bing Yang et al.. “Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step.” CrystEngComm, vol. 18, no. 36, 2016, pp. 6817–6823. http://access.bl.uk/ark:/81055/vdc_100036708374.0x000010