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APA Citation
Yang, B., Zhuang, H., Li, J., Huang, N., Liu, L., Tai, K., & Jiang, X. (2016). defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step. CrystEngComm, 18(36), 6817–6823. http://access.bl.uk/ark:/81055/vdc_100036708374.0x000010