Cite
HARVARD Citation
Yang, B. et al. (2016). Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step. CrystEngComm. 18 (36), pp. 6817-6823. [Online].
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Yang, B. et al. (2016). Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step. CrystEngComm. 18 (36), pp. 6817-6823. [Online].