Cite
MLA Citation
Peng Ding et al.. “Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance.” Solid-state electronics, vol. 123, 2016, pp. 1–5. http://access.bl.uk/ark:/81055/vdc_100034090904.0x000026