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APA Citation
Ding, P., Chen, C., Ding, W., Yang, F., Su, Y., Wang, D., & Jin, Z. (2016). ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. Solid-state electronics, 123, 1–5. http://access.bl.uk/ark:/81055/vdc_100034090904.0x000026