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Ding, P. et al. (2016). Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. Solid-state electronics. pp. 1-5. [Online].
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Ding, P. et al. (2016). Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. Solid-state electronics. pp. 1-5. [Online].