Cite
APA Citation
Qin, C., Wang, G., Hong, P., Liu, J., Yin, H., Yin, H., Ma, X., Cui, H., Lu, Y., Meng, L., Xiang, J., Zhong, H., Zhu, H., Xu, Q., Li, J., Yan, J., Zhao, C., & Radamson, H. H. (2016). process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs. Solid-state electronics, 123, 38–43. http://access.bl.uk/ark:/81055/vdc_100034090904.0x000020