Cite
HARVARD Citation
Qin, C. et al. (2016). Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs. Solid-state electronics. pp. 38-43. [Online].
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Qin, C. et al. (2016). Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs. Solid-state electronics. pp. 38-43. [Online].