Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices. (June 2016)

• Record Type: Journal Article
• Authors: Yu, Zhihui; Jin, Hao; Dong, Shurong; Wong, Hei; Zeng, Jie; Wang, Weihuai
• Is Part Of: Microelectronics and reliability. Volume 61(2016)
• Page Start: 111
• Page End: 114
• Publication Date: 2016-06
• Subjects: Electrostatic discharge (ESD) -- LDMOS -- Silicon-controlled rectifier (SCR) -- Reliability -- Trigger voltage; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.12.024
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper presents a comparative study on the electrostatic discharge (ESD) characteristics of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) and LDMOS with embedded silicon controlled rectifier (LDMOS-SCR) by using transmission line pulsing (TLP) measurements. Results show that the safe operating area (SOA) of LDMOS shrank pronouncedly and its reliability degraded due to the walk-in of trigger voltage (Vt1 ). The Vt1 walk-in is attributed to the so called weak spot filament created/grown near the N + drain region in previous ESD strike. The isolation drain structure in LDMOS-SCR can solve this issue. However, both devices were found to be not robust enough when they were subjected to be operated at high temperature ambient. Highlights: Devices of LDMOS and LDMOS-SCR are taped out in 0.35 um BCD process and tested by Bath 4002. LDMOS trigger voltage walk-in effect is researched with different temperature and gate bias voltage. LDMOS-SCR's trigger voltage and leakage current degrade greatly in high ambient temperature.