Cite
MLA Citation
Jian Ren et al.. “Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes.” Microelectronics and reliability, vol. 61, 2016, pp. 82–86. http://access.bl.uk/ark:/81055/vdc_100032468968.0x000050