Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. (June 2016)

• Record Type: Journal Article
• Authors: Ren, Jian; Yan, Dawei; Zhai, Yang; Mou, Wenjie; Gu, Xiaofeng
• Is Part Of: Microelectronics and reliability. Volume 61(2016)
• Page Start: 82
• Page End: 86
• Publication Date: 2016-06
• Subjects: Lattice-matched InAlN/GaN Schottky barrier diode -- AlGaN/GaN Schottky barrier diode -- Electrical characteristics -- Dislocation; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.11.005
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Lattice-matched Pt/Au–In0.17 Al0.83 N/GaN hetreojunction Schottky barrier diodes (SBDs) with circular planar structure have been fabricated. The electrical characteristics of InAlN/GaN SBD, such as two-dimensional electron gas (2DEG) density, turn-on voltage, Schottky barrier height, reverse breakdown voltage and the forward current-transport mechanisms, are investigated and compared with those of a conventional AlGaN/GaN SBD. The results show that, despite the higher Schottky barrier height, more dislocations in InAlN layer causes a larger leakage current and lower reverse breakdown voltage than the AlGaN/GaN SBD. The emission microscopy images of past-breakdown device suggest that a horizontal premature breakdown behavior attributed to the large leakage current happens in the InAlN/GaN SBD, differing from the vertical breakdown in the AlGaN/GaN SBD. Highlights: We fabricate lattice-matched Pt/Au–In0.17 Al0.83 N/GaN SBDs. The electrical characteristics of InAlN/GaN SBDs are investigated by EMMI and CL. A horizontal premature breakdown behavior is observed in InAlN/GaN SBDs. The reason of large leakage current and low breakdown voltage is explained.