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HARVARD Citation
Ren, J. et al. (2016). Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. Microelectronics and reliability. pp. 82-86. [Online].
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Ren, J. et al. (2016). Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. Microelectronics and reliability. pp. 82-86. [Online].