Cite
HARVARD Citation
Peng, Y. et al. (2016). InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. Superlattices and microstructures. pp. 144-152. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Peng, Y. et al. (2016). InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. Superlattices and microstructures. pp. 144-152. [Online].