Cite
HARVARD Citation
Ji, F. et al. (2016). A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Microelectronics and reliability. pp. 24-33. [Online].
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Ji, F. et al. (2016). A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Microelectronics and reliability. pp. 24-33. [Online].